III-nitride on silicon electrically injected microrings for nanophotonic circuits

Abstract : Nanophotonic circuits using group III-nitrides on silicon are still lacking one key component: efficient electrical injection. In this paper we demonstrate an electrical injection scheme using a metal microbridge contact in thin III-nitride on silicon mushroom-type microrings that is compatible with integrated nanophotonic circuits with the goal of achieving electrically injected lasing. Using a central buried n-contact to bypass the insulating buffer layers, we are able to underetch the microring, which is essential for maintaining vertical confinement in a thin disk. We demonstrate direct current room-temperature electroluminescence with 440 mW/cm 2 output power density at 20 mA from such microrings with diameters of 30 to 50 µm. The first steps towards achieving an integrated photonic circuit are demonstrated.
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Contributor : Farsane Tabataba-Vakili <>
Submitted on : Tuesday, April 16, 2019 - 10:59:40 AM
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Farsane Tabataba-Vakili, Stéphanie Rennesson, Benjamin Damilano, Eric Frayssinet, Jean-Yves Duboz, et al.. III-nitride on silicon electrically injected microrings for nanophotonic circuits. Optics Express, Optical Society of America, 2019, 27 (8), pp.11800-11808. ⟨10.1364/OE.27.011800⟩. ⟨hal-02100722⟩



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