Optical properties of porous Si/PECVD SiNX:H reflector on single crystalline Si for solar cells

Abstract : The improvement of optical confinement on the back crystalline silicon solar cell is one of the factors leading to its better performance. Porous silicon (PS) layer can be used as a back reflector (BR) in solar cells. In this work, single layers of porous silicon were grown by electrodeposition on a single crystalline silicon substrate. The measurement of the total reflectivity (R T) on Si/PS surface showed a significant improvement in optical confinement compared to that measured on Si/standard Al back surface field (BSF). The internal reflectivity (R B) extracted from total reflectivity measurements achieved 86 % for the optimized single PS layer (92 nm thick layer with 60 % porosity) in the wavelength range between 950 and 1200 nm. This improvement was estimated as more than 17 % compared to that measured on the surface of Si/BSF Al contact. To improve the stability and passivation properties of PS layer BR, silicon nitride layer (SiN x) was deposited by PECVD on a PS layer. The maximum measured total reflectivity for PS/SiN x achieved approximately 56 % corresponding to an improved R B of up to 83 %. The PS formation process in combination with the PECVD SiN x , can be applied in the photovoltaic cell technology and offer a promising technique to produce high-efficiency and low-cost c-Si solar cells.
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L. Remache, T. Nychyporuk, N. Guermit, E. Fourmond, A. Mahdjoub, et al.. Optical properties of porous Si/PECVD SiNX:H reflector on single crystalline Si for solar cells. Materials Science-Poland, De Gruyter Open, 2016, 34 (1), pp.94-100. ⟨10.1515/msp-2016-0054⟩. ⟨hal-01804063⟩

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