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Journal articles

Surface space charge effects in planar submicrometer GaAs and InP devices

C. Bru-Chevallier 1, 2 Patrice de Carné 2 P. Dansas 2 Daniel Pascal 2 Michel Rousseau 3, 2 Suzanne Laval 2 
1 INL - S&N - INL - Spectroscopies et Nanomatériaux
INL - Institut des Nanotechnologies de Lyon
2 IEF - Institut d'électronique fondamentale
3 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
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Journal articles
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https://hal-udl.archives-ouvertes.fr/hal-01977000
Contributor : Catherine BRU CHEVALLIER Connect in order to contact the contributor
Submitted on : Thursday, January 10, 2019 - 2:42:57 PM
Last modification on : Sunday, June 26, 2022 - 12:10:37 PM

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  • HAL Id : hal-01977000, version 1

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CNRS | UNIV-VALENCIENNES | UNIV-LYON1 | INSA-LYON | EC-LYON | IEMN | INL | UNIV-LILLE | INSA-GROUPE | UDL

Citation

C. Bru-Chevallier, Patrice de Carné, P. Dansas, Daniel Pascal, Michel Rousseau, et al.. Surface space charge effects in planar submicrometer GaAs and InP devices. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 1987, ED34 (8), pp.1611-1616. ⟨hal-01977000⟩

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