Surface space charge effects in planar submicrometer GaAs and InP devices

C. Bru-Chevallier 1, 2 Patrice de Carné 2 P. Dansas 2 Daniel Pascal 2 Michel Rousseau 3, 2 Suzanne Laval 2
1 INL - S&N - INL - Spectroscopies et Nanomatériaux
INL - Institut des Nanotechnologies de Lyon
2 IEF - Institut d'électronique fondamentale
3 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520
Document type :
Journal articles
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https://hal-udl.archives-ouvertes.fr/hal-01977000
Contributor : Catherine Bru Chevallier <>
Submitted on : Thursday, January 10, 2019 - 2:42:57 PM
Last modification on : Friday, October 25, 2019 - 2:34:08 PM

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  • HAL Id : hal-01977000, version 1

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EC-LYON | INL | UNIV-LYON1 | INSA-LYON | UNIV-LILLE | UNIV-VALENCIENNES | INSA-GROUPE

Citation

C. Bru-Chevallier, Patrice de Carné, P. Dansas, Daniel Pascal, Michel Rousseau, et al.. Surface space charge effects in planar submicrometer GaAs and InP devices. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 1987, ED34 (8), pp.1611-1616. ⟨hal-01977000⟩

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