Interfacial traps in Ga 0.47 In 0.53 As/InP heterostructures - Université de Lyon Access content directly
Journal Articles Journal of Applied Physics Year : 1990

Interfacial traps in Ga 0.47 In 0.53 As/InP heterostructures

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Materials Engineering Sciences [physics]

Catherine BRU CHEVALLIER  : Connect in order to contact the contributor

https://hal-udl.archives-ouvertes.fr/hal-01977062

Submitted on : Thursday, January 10, 2019-3:04:29 PM

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hal-01977062 , version 1 (10-01-2019)

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  • HAL Id : hal-01977062 , version 1

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Pierre Dansas, Daniel Pascal, C. Bru-Chevallier, S. Laval, L. Giraudet, et al.. Interfacial traps in Ga 0.47 In 0.53 As/InP heterostructures. Journal of Applied Physics, 1990, 67 (3), pp.1384-1388. ⟨hal-01977062⟩

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CNRS UNIV-VALENCIENNES UNIV-LYON1 INSA-LYON EC-LYON IEMN INL UNIV-PARIS-SACLAY UNIV-LILLE INSA-GROUPE UDL EC_LYON_STRICT
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