Skip to Main content Skip to Navigation
Journal articles

Monte Carlo simulation of pseudomorphic InGaAs/GaAs high electron mobility transistors: Physical limitations at ultrashort gate length

P. Dollfus 1 C. Bru 2, 1 P. Hesto 1
1 IEF - Institut d'électronique fondamentale
2 INL - S&N - INL - Spectroscopies et Nanomatériaux
INL - Institut des Nanotechnologies de Lyon
Complete list of metadatas
https://hal-udl.archives-ouvertes.fr/hal-01977076
Contributor : Catherine Bru Chevallier <>
Submitted on : Thursday, January 10, 2019 - 3:09:43 PM
Last modification on : Thursday, January 23, 2020 - 3:36:23 PM

Identifiers

  • HAL Id : hal-01977076, version 1

Collections

CNRS | EC-LYON | INL | UNIV-LYON1 | INSA-LYON | INSA-GROUPE | UDL

Citation

P. Dollfus, C. Bru, P. Hesto. Monte Carlo simulation of pseudomorphic InGaAs/GaAs high electron mobility transistors: Physical limitations at ultrashort gate length. Journal of Applied Physics, American Institute of Physics, 1993, 73 (2), pp.804-812. ⟨hal-01977076⟩

Export

BibTeX TEI DC DCterms EndNote

Share

Metrics

Record views

21

Contact

Informations

CCSD