Monte Carlo simulation of pseudomorphic InGaAs/GaAs high electron mobility transistors: Physical limitations at ultrashort gate length

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Contributor : Catherine Bru Chevallier <>
Submitted on : Thursday, January 10, 2019 - 3:09:43 PM
Last modification on : Thursday, November 7, 2019 - 11:02:11 AM

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  • HAL Id : hal-01977076, version 1

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P. Dollfus, C. Bru, P. Hesto. Monte Carlo simulation of pseudomorphic InGaAs/GaAs high electron mobility transistors: Physical limitations at ultrashort gate length. Journal of Applied Physics, American Institute of Physics, 1993, 73 (2), pp.804-812. ⟨hal-01977076⟩

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