Monte Carlo simulation of pseudomorphic InGaAs/GaAs high electron mobility transistors: Physical limitations at ultrashort gate length

P. Dollfus; C. Bru; P. Hesto

Journal articles

Monte Carlo simulation of pseudomorphic InGaAs/GaAs high electron mobility transistors: Physical limitations at ultrashort gate length

P. Dollfus ¹ C. Bru ^{2, 1} P. Hesto ¹

1 IEF - Institut d'électronique fondamentale

2 INL - S&N - INL - Spectroscopies et Nanomatériaux

INL - Institut des Nanotechnologies de Lyon

Document type :

Journal articles

Domain :

Engineering Sciences [physics] / Micro and nanotechnologies/Microelectronics

Engineering Sciences [physics]

Complete list of metadatas

https://hal-udl.archives-ouvertes.fr/hal-01977076
Contributor : Catherine Bru Chevallier <>
Submitted on : Thursday, January 10, 2019 - 3:09:43 PM
Last modification on : Wednesday, September 16, 2020 - 5:02:05 PM

Monte Carlo simulation of pseudomorphic InGaAs/GaAs high electron mobility transistors: Physical limitations at ultrashort gate length

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Monte Carlo simulation of pseudomorphic InGaAs/GaAs high electron mobility transistors: Physical limitations at ultrashort gate length

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