M. Kneissl, T. Seong, H. J. Amano, and H. , The emergence and prospects of deep-ultraviolet light-emitting diode technologies, Nat. Photonics, vol.13, pp.233-277, 2019.

J. Chen, S. Loeb, and K. , LED revolution: fundamentals and prospects for UV disinfection applications, Environ. Sci. Water Res. Technol, vol.3, pp.188-202, 2017.

K. Song, M. Mohseni, and F. Taghipour, Application of ultraviolet light-emitting diodes (UV-LEDs) for water disinfection: A review Water Res, vol.94, pp.341-350, 2016.

Y. Nagasawa and A. Hirano, A Review of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Sapphire Appl. Sci, vol.8, p.1264, 2018.

T. Moustakas and R. Paiella, Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz Rep, Prog. Phys, vol.80, p.106501, 2017.

T. Takano, T. Mino, J. Sakai, N. Noguchi, K. Tsubaki et al., Deepultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency, Appl. Phys. Express, vol.10, p.31002, 2017.

Y. Saito, K. Hamaguchi, R. Mizushima, S. Uemura, T. Nagasako et al., Field emission from carbon nanotubes and its application to cathode ray tube lighting elements, Appl. Surf. Sci, vol.146, pp.305-316, 1999.

T. Oto, R. Banal, K. Kataoka, M. Funato, and Y. Kawakami, 100 mW deepultraviolet emission from aluminium-nitride-based quantum wells pumped by an electron beam, Nat. Photonics, vol.4, pp.767-70, 2010.

J. Herbert and . Reich, Principles of Electron Tubes (Literary Licensing, LLC), 2013.

T. Matsumoto, S. Iwayama, T. Saito, Y. Kawakami, F. Kubo et al., Handheld deep ultraviolet emission device based on aluminum nitride quantum wells and graphene nanoneedle field emitters Opt, Express, vol.20, p.24320, 2012.

Y. Shimahara, H. Miyake, K. Hiramatsu, F. Fukuyo, T. Okada et al., Fabrication of Deep-Ultraviolet-Light-Source Tube Using Si-Doped AlGaN, Appl. Phys. Express, vol.4, p.42103, 2011.

S. Ivanov, V. Jmerik, D. Nechaev, V. Kozlovsky, and M. Tiberi, E-beam pumped mid-UV sources based on MBE-grown AlGaN MQW: Mid-UV sources based on MBE-grown, AlGaN MQW Phys. Status Solidi A, vol.212, pp.1011-1017, 2015.

F. Tabataba-vakili, T. Wunderer, M. Kneissl, Z. Yang, M. Teepe et al., Dominance of radiative recombination from electronbeam-pumped deep-UV AlGaN multi-quantum-well heterostructures, Appl. Phys. Lett, vol.109, p.181105, 2016.

Y. Wang, X. Rong, S. Ivanov, V. Jmerik, Z. Chen et al., Deep Ultraviolet Light Source from Ultrathin GaN/AlN MQW Structures with Output Power Over 2 Watt Adv, Opt. Mater, vol.7, p.1801763, 2019.

T. Hayashi, Y. Kawase, N. Nagata, T. Senga, S. Iwayama et al., Demonstration of electron beam laser excitation in the UV range using a GaN/AlGaN multiquantum well active layer Sci, p.2944, 2017.

T. Wunderer, J. Jeschke, Z. Yang, M. Teepe, M. Batres et al., Resonator-Length Dependence of Electron-Beam-Pumped UV-A GaN-Based Lasers, IEEE Photonics Technol. Lett, vol.29, pp.1344-1351, 2017.

J. Renard, P. Kandaswamy, M. E. Gayral, and B. , Suppression of nonradiative processes in long-lived polar GaN/AlN quantum dots, Appl. Phys. Lett, vol.95, p.131903, 2009.

?. Ga?evi?, A. Das, J. Teubert, Y. Kotsar, P. Kandaswamy et al., Internal quantum efficiency of III-nitride quantum dot superlattices grown by plasma-assisted molecular-beam epitaxy, J. Appl. Phys, vol.109, p.103501, 2011.

A. Toropov, E. Shevchenko, T. Shubina, V. Jmerik, D. Nechaev et al., AlGaN Nanostructures with Extremely High Room-Temperature Internal Quantum Efficiency of Emission Below 300 nm, J. Electron. Mater, vol.46, pp.3888-93, 2017.

A. Toropov, E. Evropeitsev, M. Nestoklon, D. Smirnov, T. Shubina et al., Strongly Confined Excitons in GaN/AlN Nanostructures with Atomically Thin GaN Layers for Efficient Light Emission in Deep, Ultraviolet Nano Lett, vol.20, pp.158-65, 2020.
URL : https://hal.archives-ouvertes.fr/hal-02397767

Y. Liao, C. Thomidis, C. Kao, and T. Moustakas, AlGaN based deep ultraviolet light emitting diodes with high internal quantum efficiency grown by molecular beam epitaxy, Appl. Phys. Lett, vol.98, p.81110, 2011.

C. Himwas, M. Den-hertog, E. Bellet-amalric, R. Songmuang, F. Donatini et al., Enhanced room-temperature mid-ultraviolet emission from AlGaN/AlN Stranski-Krastanov quantum dots, J. Appl. Phys, vol.116, p.23502, 2014.
URL : https://hal.archives-ouvertes.fr/hal-01319881

C. Himwas, R. Songmuang, L. S. Dang, J. Bleuse, L. Rapenne et al., Thermal stability of the deep ultraviolet emission from AlGaN/AlN Stranski-Krastanov quantum dots, Appl. Phys. Lett, vol.101, p.241914, 2012.
URL : https://hal.archives-ouvertes.fr/hal-01021386

S. Islam, K. Lee, J. Verma, V. Protasenko, S. Rouvimov et al., MBE-grown 232-270 nm deep-UV LEDs using monolayer thin binary GaN/AlN quantum heterostructures, Appl. Phys. Lett, vol.110, p.41108, 2017.

J. Brault, S. Matta, T. Ngo, A. Khalfioui, M. Valvin et al., Internal quantum efficiencies of AlGaN quantum dots grown by molecular beam epitaxy and emitting in the UVA to UVC ranges, J. Appl. Phys, vol.126, p.205701, 2019.
URL : https://hal.archives-ouvertes.fr/hal-02380035

W. Yang, J. Li, Y. Zhang, P. Huang, T. Lu et al., High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability Sci, vol.4, p.5166, 2015.

S. Tanaka, J. Lee, R. , P. Okagawa, and H. , A UV Light-Emitting Diode Incorporating GaN Quantum Dots Jpn, J. Appl. Phys, vol.42, pp.885-892, 2003.

V. Chamard, T. Schülli, M. Sztucki, T. Metzger, E. Sarigiannidou et al., Strain distribution in nitride quantum dot multilayers, Phys. Rev. B, vol.69, p.125327, 2004.
URL : https://hal.archives-ouvertes.fr/hal-01253302

F. Guillot, E. Bellet-amalric, E. Monroy, M. Tchernycheva, L. Nevou et al., Si-doped GaN?AlN quantum dot superlattices for optoelectronics at telecommunication wavelengths, J. Appl. Phys, vol.100, p.44326, 2006.

A. Polian, M. Grimsditch, and I. Grzegory, Elastic constants of gallium nitride, J. Appl. Phys, vol.79, pp.3343-3347, 1996.

A. Wright, Elastic properties of zinc-blende and wurtzite AlN, GaN, and InN J. Appl. Phys, vol.82, pp.2833-2842, 1997.

H. Leamy, Charge collection scanning electron microscopy, J. Appl. Phys, vol.53, pp.51-80, 1982.

M. Bickermann, B. Epelbaum, F. O. Tautz, B. Heimann, P. Winnacker et al., Faceting in AlN bulk crystal growth and its impact on optical properties of the crystals, Phys. Status Solidi C, vol.9, pp.449-52, 2012.

T. Koppe, H. Hofsäss, and U. Vetter, Overview of band-edge and defect related luminescence in aluminum nitride, J. Lumin, vol.178, pp.267-81, 2016.

R. Collazo, J. Xie, B. E. Gaddy, Z. Bryan, R. Kirste et al., On the origin of the 265 nm absorption band in AlN bulk crystals, Appl. Phys. Lett, vol.100, p.191914, 2012.

M. Shatalov, J. Yang, W. Sun, R. Kennedy, R. Gaska et al., Efficiency of light emission in high aluminum content AlGaN quantum wells, J. Appl. Phys, vol.105, p.73103, 2009.

K. Ban, J. Yamamoto, K. Takeda, K. Ide, M. Iwaya et al., Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells Appl. Phys. Express, vol.4, p.52101, 2011.

Z. Bryan, I. Bryan, J. Xie, S. Mita, Z. Sitar et al., High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates, Appl. Phys. Lett, vol.106, p.142107, 2015.

H. Murotani, D. Akase, K. Anai, Y. Yamada, H. Miyake et al., Dependence of internal quantum efficiency on doping region and Si concentration in Alrich AlGaN quantum wells, Appl. Phys. Lett, vol.101, p.42110, 2012.