Heteroepitaxial Growth of Lithium Niobate Thin Films on Sapphire Substrates with Different Orientations by Pulsed-Laser Deposition

Ihor Pershukov (1, 2) , Jérôme Richy (1) , Emma Borel (1) , Elisa Soulat (1) , Marie Bousquet (1) , Florian Dupont (1) , Bertrand Vilquin (3)

1 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
2 INL - Institut des Nanotechnologies de Lyon
3 INL - MFN - INL - Matériaux Fonctionnels et Nanostructures

In this study, epitaxial LiNbO3 thin films were successfully grown on a- and c-Al2O3 substrates by Pulsed Laser Deposition (PLD). In order to control the film crystallinity and chemical composition, the influence of different growth parameters, such as substrate temperature, oxygen pressure, and target composition, were studied. The physical and chemical properties of the as-deposited LiNbO3 layers were characterized.

Domains: Materials; Micro and nanotechnologies/Microelectronics

Ihor Pershukov, Jérôme Richy, Emma Borel, Elisa Soulat, Marie Bousquet, et al.. Heteroepitaxial Growth of Lithium Niobate Thin Films on Sapphire Substrates with Different Orientations by Pulsed-Laser Deposition. 2022 IEEE International Symposium on Applications of Ferroelectrics (ISAF 2022), IEEE, Jun 2022, Tours, France. ⟨10.1109/ISAF51494.2022.9870044⟩. ⟨hal-03715485⟩