Thickness effect on the ferroelectric properties of La-doped HfO 2 epitaxial films down to 4.5 nm

Tingfeng Song , Romain Bachelet (1) , Guillaume Saint-Girons (1) , Nico Dix , Ignasi Fina , Florencio Sánchez

1 INL - MFN - INL - Matériaux Fonctionnels et Nanostructures

Epitaxial La:HfO 2 films of less than 7 nm have a high remanent polarization of about 30 μC cm −2 , and show slight wake-up, endurance of at least 10 10 cycles and retention of more than 10 years, with both latter properties measured at the same poling voltage.

Domains: Materials Science [cond-mat.mtrl-sci]

Tingfeng Song, Romain Bachelet, Guillaume Saint-Girons, Nico Dix, Ignasi Fina, et al.. Thickness effect on the ferroelectric properties of La-doped HfO 2 epitaxial films down to 4.5 nm. Journal of Materials Chemistry C, 2021, 9 (36), pp.12224-12230. ⟨10.1039/D1TC02512K⟩. ⟨hal-03380245⟩