Threshold Voltage Measurement Protocol “Triple Sense” Applied to GaN HEMTs

Tamiris Grossl Bade (1) , Hassan Hamad (1) , Adrien Lambert (1) , Hervé Morel (1) , Dominique Planson (1)

1 EE - Ampère, Département Energie Electrique

The threshold voltage instability in p-GaN gate high electron mobility transistors (HEMTs) has been brought into evidence in recent years. It can lead to reliability issues in switching applications, and it can be followed by other degradation mechanisms. In this paper, a Vth measurement protocol established for SiC MOSFETs is applied to GaN HEMTs: the triple sense protocol, which uses voltage bias to precondition the transistor gate. It has been experimentally verified that the proposed protocol increased the stability of the Vth measurement, even for measurements following degrading voltage bias stress on both drain and gate.

Keywords: threshold voltage; GaN HEMT; gate-injection transistor; hybrid-drain gate-injection transistor; cascode HEMT

Domains: Electronics; Electric power

Tamiris Grossl Bade, Hassan Hamad, Adrien Lambert, Hervé Morel, Dominique Planson. Threshold Voltage Measurement Protocol “Triple Sense” Applied to GaN HEMTs. Electronics, 2023, 12 (11), pp.2529. ⟨10.3390/electronics12112529⟩. ⟨hal-04121028⟩